FQB6N60CTM

Part No :: FQB6N60CTM

Manufacturer: Sanyo Semiconductor/ON Semiconductor

VIGOR # :: 4582361

Description: MOSFET N-CH 600V 5.5A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: FQB6N60CTM PDF

Country of origin: -

Date code: -

FQB6N60CTM Specifications

Type	Description
Series:	QFET®
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	810 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	125W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263AB)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Please confirm the specifications of the products when ordering.
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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 10 - Jan 14 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of FQB6N60CTM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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