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SI1315DL-T1-GE3

SI1315DL-T1-GE3

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Part No :

SI1315DL-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 8V 900MA SOT323
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Oct 05 - Oct 09 2025
DataSheet
SI1315DL-T1-GE3 PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of SI1315DL-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI1315DL-T1-GE3 Specifications
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:336mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.4 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:112 pF @ 4 V
FET Feature:-
Power Dissipation (Max):300mW (Ta), 400mW (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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