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IRF6711STR1PBF

IRF6711STR1PBF

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Part No :

IRF6711STR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 19A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Oct 22 - Oct 26 2025
DataSheet
IRF6711STR1PBF PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of IRF6711STR1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IRF6711STR1PBF Specifications
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1810 pF @ 13 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ SQ
Package / Case:DirectFET™ Isometric SQ
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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