NTLJS1102PTBG

Part No :: NTLJS1102PTBG

Manufacturer: Sanyo Semiconductor/ON Semiconductor

VIGOR # :: 4582935

Description: MOSFET P-CH 8V 3.7A 6WDFN

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: NTLJS1102PTBG PDF

Country of origin: -

Date code: -

NTLJS1102PTBG Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	8 V
Current - Continuous Drain (Id) @ 25°C:	3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Rds On (Max) @ Id, Vgs:	36mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id:	720mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	25 nC @ 4.5 V
Vgs (Max):	±6V
Input Capacitance (Ciss) (Max) @ Vds:	1585 pF @ 4 V
FET Feature:	-
Power Dissipation (Max):	700mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-WDFN (2x2)
Package / Case:	6-WDFN Exposed Pad

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 30 - Feb 03 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

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NTLJS1102PTBG

NTLJS1102PTBG

4582935

Pricing(USD)