FQI4N20LTU

Part No :: FQI4N20LTU

Manufacturer: Sanyo Semiconductor/ON Semiconductor

VIGOR # :: 4583616

Description: MOSFET N-CH 200V 3.8A I2PAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: FQI4N20LTU PDF

Country of origin: -

Date code: -

FQI4N20LTU Specifications

Type	Description
Series:	QFET®
Package:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	1.35Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	5.2 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	310 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	3.13W (Ta), 45W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I2PAK (TO-262)
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 21 - Jan 25 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of FQI4N20LTU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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4583616

Pricing(USD)