SIR412DP-T1-GE3

Part No :: SIR412DP-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 4583678

Description: MOSFET N-CH 25V 20A PPAK SO-8

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIR412DP-T1-GE3 PDF

Country of origin: -

Date code: -

SIR412DP-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	16 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	600 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	3.9W (Ta), 15.6W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SO-8
Package / Case:	PowerPAK® SO-8

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 27 - Jan 31 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of SIR412DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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