IPI04CN10N G

Part No :: IPI04CN10N G

Manufacturer: IR (Infineon Technologies)

VIGOR # :: 4584634

Description: MOSFET N-CH 100V 100A TO262-3

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: IPI04CN10N G PDF

Country of origin: -

Date code: -

IPI04CN10N G Specifications

Type	Description
Series:	OptiMOS™
Package:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	210 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	13800 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 21 - Jan 25 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of IPI04CN10N G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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IPI04CN10N G

IPI04CN10N G

4584634

Pricing(USD)