SPD11N10

Part No :: SPD11N10

Manufacturer: IR (Infineon Technologies)

VIGOR # :: 4585317

Description: MOSFET N-CH 100V 10.5A TO252-3

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SPD11N10 PDF

Country of origin: -

Date code: -

SPD11N10 Specifications

Type	Description
Series:	SIPMOS®
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:	4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs:	18.3 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	400 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	50W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	P-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 23 - Jan 27 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

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