FQD19N10TM_F080

Part No :: FQD19N10TM_F080

Manufacturer: Sanyo Semiconductor/ON Semiconductor

VIGOR # :: 4585387

Description: MOSFET N-CH 100V 15.6A DPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: FQD19N10TM_F080 PDF

Country of origin: -

Date code: -

FQD19N10TM_F080 Specifications

Type	Description
Series:	QFET®
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	15.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	100mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	25 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	780 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 50W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 15 - Jan 19 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

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