SI2311DS-T1-GE3

Part No :: SI2311DS-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 4585405

Description: MOSFET P-CH 8V 3A SOT23-3

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SI2311DS-T1-GE3 PDF

Country of origin: -

Date code: -

SI2311DS-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	8 V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	45mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	970 pF @ 4 V
FET Feature:	-
Power Dissipation (Max):	710mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 21 - Jan 25 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of SI2311DS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SI2311DS-T1-GE3

SI2311DS-T1-GE3

4585405

Pricing(USD)