NTD6600N-001

Part No :: NTD6600N-001

Manufacturer: Sanyo Semiconductor/ON Semiconductor

VIGOR # :: 4585962

Description: MOSFET N-CH 100V 12A IPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: NTD6600N-001 PDF

Country of origin: -

Date code: -

NTD6600N-001 Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	5V
Rds On (Max) @ Id, Vgs:	146mOhm @ 6A, 5V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	700 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1.28W (Ta), 56.6W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

May 23 - May 27 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

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NTD6600N-001

NTD6600N-001

4585962

Pricing(USD)