SIE836DF-T1-GE3

Part No :: SIE836DF-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 4586602

Description: MOSFET N-CH 200V 18.3A 10POLARPK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIE836DF-T1-GE3 PDF

Country of origin: -

Date code: -

SIE836DF-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	130mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	41 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1200 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	5.2W (Ta), 104W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	10-PolarPAK® (SH)
Package / Case:	10-PolarPAK® (SH)

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 20 - Jan 24 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of SIE836DF-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SIE836DF-T1-GE3

SIE836DF-T1-GE3

4586602

Pricing(USD)