SPB80N10L G

Part No :: SPB80N10L G

Manufacturer: IR (Infineon Technologies)

VIGOR # :: 4586608

Description: MOSFET N-CH 100V 80A TO263-3

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SPB80N10L G PDF

Country of origin: -

Date code: -

SPB80N10L G Specifications

Type	Description
Series:	SIPMOS®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Discontinued at Digi-Key
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	14mOhm @ 58A, 10V
Vgs(th) (Max) @ Id:	2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:	240 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4540 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	250W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3-2
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 20 - Jan 24 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of SPB80N10L G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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