IPD12CNE8N G

Part No :: IPD12CNE8N G

Manufacturer: IR (Infineon Technologies)

VIGOR # :: 4587379

Description: MOSFET N-CH 85V 67A TO252-3

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: IPD12CNE8N G PDF

Country of origin: -

Date code: -

IPD12CNE8N G Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	85 V
Current - Continuous Drain (Id) @ 25°C:	67A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	12.4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id:	4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:	64 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4340 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	125W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

May 21 - May 25 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of IPD12CNE8N G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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IPD12CNE8N G

IPD12CNE8N G

4587379

Pricing(USD)