Part No :

SIR892DP-T1-GE3

Manufacturer
Vishay / Siliconix
VIGOR # :

4587492

Description
MOSFET N-CH 25V 50A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SIR892DP-T1-GE3 PDF
Country of origin
-
Date code
-
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Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2645 pF @ 10 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Shipped from
HK warehouse
Expected Shipping Date
Oct 16 - Oct 20 2026
Pricing(USD)
Quantity Unit Price Ext. Price

Current price of SIR892DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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