SIHD11N80AE-GE3

Part No :: SIHD11N80AE-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 800V 8A TO252AA

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIHD11N80AE-GE3 PDF

Availability: 0 pieces

Unit Price: ~~$1.88000~~

Current price of SIHD11N80AE-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

SIHD11N80AE-GE3 Specifications

Type	Description
Series:	E
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	42 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	804 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	78W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252AA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Nov 20 - Nov 24 2025

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Pricing(USD)

Quantity	Unit Price	Ext. Price
1	$1.88000	$1.88

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