BSM180C12P3C202

Part No :: BSM180C12P3C202

Manufacturer: ROHM Semiconductor

Description: SICFET N-CH 1200V 180A MODULE

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: BSM180C12P3C202 PDF

Availability: 2 pieces

Unit Price: ~~$492.00000~~

Current price of BSM180C12P3C202 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

BSM180C12P3C202 Specifications

Type	Description
Series:	-
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds:	9000 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	880W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Supplier Device Package:	Module
Package / Case:	Module

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In Stock: 2

Shipped from

HK warehouse

Expected Shipping Date

Nov 20 - Nov 24 2025

Enter Quantity

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	$492.00000	$492

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