IAUT165N08S5N029ATMA1

Part No :: IAUT165N08S5N029ATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 80V 165A 8HSOF

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: IAUT165N08S5N029ATMA1 PDF

Availability: 0 pieces

Current price of IAUT165N08S5N029ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

IAUT165N08S5N029ATMA1 Specifications

Type	Description
Series:	OptiMOS™-5
Package:	Tape & Reel (TR)
Part Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	165A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:	3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs:	90 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6370 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	167W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-HSOF-8-1
Package / Case:	8-PowerSFN

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Nov 23 - Nov 27 2025

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Pricing(USD)

Quantity	Unit Price	Ext. Price
1	$2.56935	$2.56935

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