SIA456DJ-T3-GE3

Part No :: SIA456DJ-T3-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 6046000

Description: MOSFET N-CH 200V 1.1A/2.6A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIA456DJ-T3-GE3 PDF

Country of origin: -

Date code: -

SIA456DJ-T3-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	1.1A (Ta), 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id:	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	14.5 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	350 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	3.5W (Ta), 19W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SC-70-6 Single
Package / Case:	PowerPAK® SC-70-6

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

May 06 - May 10 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.4005~~	~~$0.40~~

Current price of SIA456DJ-T3-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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