SIHU6N80AE-GE3

Part No :: SIHU6N80AE-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 800V 5A TO251AA

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIHU6N80AE-GE3 PDF

Availability: 3000 pieces

Unit Price: ~~$0.63910~~

Current price of SIHU6N80AE-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

SIHU6N80AE-GE3 Specifications

Type	Description
Series:	E
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	22.5 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	422 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	62.5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-251AA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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Delivery date: usually 2 to 7 working days.
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In Stock: 3000

Shipped from

HK warehouse

Expected Shipping Date

Nov 20 - Nov 24 2025

Enter Quantity

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	$0.63910	$0.6391

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