FQE10N20LCTU

Part No :: FQE10N20LCTU

Manufacturer: Sanyo Semiconductor/ON Semiconductor

VIGOR # :: 8558624

Description: MOSFET N-CH 200V 4A TO126-3

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: FQE10N20LCTU PDF

Country of origin: -

Date code: -

FQE10N20LCTU Specifications

Type	Description
Series:	QFET®
Package:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	19 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	490 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	12.8W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-126-3
Package / Case:	TO-225AA, TO-126-3

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Dec 29 - Jan 02 2025

Pricing(USD)

Quantity	Unit Price	Ext. Price

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