TK12J60W,S1VE(S

Part No :: TK12J60W,S1VE(S

Manufacturer: Toshiba Electronic Devices and Storage Corporation

VIGOR # :: 8558667

Description: MOSFET N-CH 600V 11.5A TO3P

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: TK12J60W,S1VE(S PDF

Country of origin: -

Date code: -

TK12J60W,S1VE(S Specifications

Type	Description
Series:	-
Package:	Tray
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:	3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:	25 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	890 pF @ 300 V
FET Feature:	-
Power Dissipation (Max):	110W (Tc)
Operating Temperature:	150°C
Mounting Type:	Through Hole
Supplier Device Package:	TO-3P(N)
Package / Case:	TO-3P-3, SC-65-3

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Apr 02 - Apr 06 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of TK12J60W,S1VE(S is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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TK12J60W,S1VE(S

TK12J60W,S1VE(S

8558667

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