SI8809EDB-T2-E1

Part No :: SI8809EDB-T2-E1

Manufacturer: Vishay / Siliconix

VIGOR # :: 8559161

Description: MOSFET P-CH 20V 1.9A MICROFOOT

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SI8809EDB-T2-E1 PDF

Country of origin: -

Date code: -

SI8809EDB-T2-E1 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	1.94 (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	90mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 8 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	500mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	4-Microfoot
Package / Case:	4-XFBGA

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 01 - Jan 05 2025

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of SI8809EDB-T2-E1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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