FDC655BN_NBNN007

Part No :: FDC655BN_NBNN007

Manufacturer: Sanyo Semiconductor/ON Semiconductor

VIGOR # :: 8559338

Description: MOSFET N-CH 30V 6.3A SUPERSOT6

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: FDC655BN_NBNN007 PDF

Country of origin: -

Date code: -

FDC655BN_NBNN007 Specifications

Type	Description
Series:	PowerTrench®
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	25mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	13 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	620 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	800mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SuperSOT™-6
Package / Case:	SOT-23-6 Thin, TSOT-23-6

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 03 - Jan 07 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

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