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BSM75GB120DN2HOSA1

BSM75GB120DN2HOSA1

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Part No :

BSM75GB120DN2HOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 105A 625W
Catalog
Transistors - IGBTs - Modules
Shipped from
HK warehouse
Expected Shipping Date
Oct 28 - Nov 01 2025
DataSheet
BSM75GB120DN2HOSA1 PDF
Availability
0 pieces
Unit Price
$98.82600

Current price of BSM75GB120DN2HOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSM75GB120DN2HOSA1 Specifications
Type Description
Series:-
Package:Tray
Part Status:Last Time Buy
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):105 A
Power - Max:625 W
Vce(on) (Max) @ Vge, Ic:3V @ 15V, 75A
Current - Collector Cutoff (Max):1.5 mA
Input Capacitance (Cies) @ Vce:5.5 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
  • Please confirm the specifications of the products when ordering.
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  • The shopping cart will automatically calculate the shipping cost.
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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