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IFS75B12N3E4B31BOSA1

IFS75B12N3E4B31BOSA1

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Part No :

IFS75B12N3E4B31BOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 150A 385W
Catalog
Transistors - IGBTs - Modules
Shipped from
HK warehouse
Expected Shipping Date
Oct 29 - Nov 02 2025
DataSheet
IFS75B12N3E4B31BOSA1 PDF
Availability
0 pieces
Unit Price
$146.37000

Current price of IFS75B12N3E4B31BOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IFS75B12N3E4B31BOSA1 Specifications
Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:Trench Field Stop
Configuration:Full Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):150 A
Power - Max:385 W
Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 75A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:4.3 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
  • Please confirm the specifications of the products when ordering.
  • MOQ means the minimum order quantity required to purchase each parts.
  • If you have special order instructions,please note it on the ordering pages.
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  • Orders cannot be canceled after shipping the packages.
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  • The shopping cart will automatically calculate the shipping cost.
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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