DF75R12W1H4FB11BOMA2

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Part No :

DF75R12W1H4FB11BOMA2

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 25A 20MW
Catalog
Transistors - IGBTs - Modules
Shipped from
HK warehouse
Expected Shipping Date
Oct 29 - Nov 02 2025
DataSheet
DF75R12W1H4FB11BOMA2 PDF
Availability
0 pieces
Unit Price
$75.09583

Current price of DF75R12W1H4FB11BOMA2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:EasyPACK™ 1B
Package:Tray
Part Status:Last Time Buy
IGBT Type:-
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):25 A
Power - Max:20 mW
Vce(on) (Max) @ Vge, Ic:2.65V @ 15V, 25A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:2 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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DF75R12W1H4FB11BOMA2

DF75R12W1H4FB11BOMA2

IGBT MOD 1200V 25A 20MW

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