F475R07W2H3B51BPSA1

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Part No :

F475R07W2H3B51BPSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MODULE 650V 75A 250W
Catalog
Transistors - IGBTs - Modules
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2025
DataSheet
F475R07W2H3B51BPSA1 PDF
Availability
0 pieces
Unit Price
$63.59933

Current price of F475R07W2H3B51BPSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:-
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):75 A
Power - Max:250 W
Vce(on) (Max) @ Vge, Ic:1.55V @ 15V, 37.5A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:4.7 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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