DF200R12W1H3FB11BOMA1

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Part No :

DF200R12W1H3FB11BOMA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 30A 20MW
Catalog
Transistors - IGBTs - Modules
Shipped from
HK warehouse
Expected Shipping Date
Nov 11 - Nov 15 2025
DataSheet
DF200R12W1H3FB11BOMA1 PDF
Availability
0 pieces
Unit Price
$84.69292

Current price of DF200R12W1H3FB11BOMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:EasyPACK™
Package:Tray
Part Status:Not For New Designs
IGBT Type:Trench Field Stop
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):30 A
Power - Max:20 mW
Vce(on) (Max) @ Vge, Ic:1.45V @ 15V, 30A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:6.15 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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  • Delivery date: usually 2 to 7 working days.
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