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BSM150GB120DN2HOSA1

BSM150GB120DN2HOSA1

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Part No :

BSM150GB120DN2HOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 210A 1250W
Catalog
Transistors - IGBTs - Modules
Shipped from
HK warehouse
Expected Shipping Date
Nov 11 - Nov 15 2025
DataSheet
BSM150GB120DN2HOSA1 PDF
Availability
0 pieces
Unit Price
$194.14500

Current price of BSM150GB120DN2HOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSM150GB120DN2HOSA1 Specifications
Type Description
Series:-
Package:Tray
Part Status:Not For New Designs
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):210 A
Power - Max:1250 W
Vce(on) (Max) @ Vge, Ic:3V @ 15V, 150A
Current - Collector Cutoff (Max):2.8 mA
Input Capacitance (Cies) @ Vce:11 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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BSM150GB120DN2HOSA1

BSM150GB120DN2HOSA1

IGBT MOD 1200V 210A 1250W

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