FPF2C110BI07AS2

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Part No :

FPF2C110BI07AS2

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT MODULE 650V 40A 300W F2
Catalog
Transistors - IGBTs - Modules
DataSheet
FPF2C110BI07AS2 PDF
Availability
0 pieces
Unit Price
$73.73357

Current price of FPF2C110BI07AS2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):40 A
Power - Max:300 W
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 40A
Current - Collector Cutoff (Max):250 µA
Input Capacitance (Cies) @ Vce:-
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Through Hole
Package / Case:30-DIP Module
Supplier Device Package:F2
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Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $73.73357 $73.73357
70 $73.73357 $5161.3499
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