AFGY100T65SPD

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Part No :

AFGY100T65SPD

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT - 650 V 100 A FS3 FOR EV TR
Catalog
Transistors - IGBTs - Single
Shipped from
HK warehouse
Expected Shipping Date
Oct 16 - Oct 20 2025
DataSheet
AFGY100T65SPD PDF
Availability
4502250 pieces
Unit Price
$8.63000

Current price of AFGY100T65SPD is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:Automotive, AEC-Q101
Package:Tube
Part Status:Active
IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):120 A
Current - Collector Pulsed (Icm):300 A
Vce(on) (Max) @ Vge, Ic:2.05V @ 15V, 100A
Power - Max:660 W
Switching Energy:5.1mJ (on), 2.7mJ (off)
Input Type:Standard
Gate Charge:109 nC
Td (on/off) @ 25°C:36ns/78ns
Test Condition:400V, 100A, 5Ohm, 15V
Reverse Recovery Time (trr):105 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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  • Delivery date: usually 2 to 7 working days.
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AFGY100T65SPD

AFGY100T65SPD

IGBT - 650 V 100 A FS3 FOR EV TR

23-CBSF-1.5X2.0X0.25

23-CBSF-1.5X2.0X0.25

RF SHIELD 1.5" X 2" THROUGH HOLE

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