GT60N321(Q)

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Part No :: GT60N321(Q)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: IGBT 1000V 60A 170W TO3P LH

Catalog: Transistors - IGBTs - Single

DataSheet: GT60N321(Q) PDF

Availability: 0 pieces

Unit Price: ~~$0.00000~~

Current price of GT60N321(Q) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

GT60N321(Q) Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Obsolete
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1000 V
Current - Collector (Ic) (Max):	60 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 60A
Power - Max:	170 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	-
Td (on/off) @ 25°C:	330ns/700ns
Test Condition:	-
Reverse Recovery Time (trr):	2.5 µs
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3PL
Supplier Device Package:	TO-3P(LH)

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Nov 16 - Nov 20 2025

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