NGTD30T120F2WP

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Part No :: NGTD30T120F2WP

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: IGBT TRENCH FIELD STOP 1200V DIE

Catalog: Transistors - IGBTs - Single

DataSheet: NGTD30T120F2WP PDF

Availability: 41308 pieces

Unit Price: ~~$0.00000~~

Current price of NGTD30T120F2WP is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

NGTD30T120F2WP Specifications

Type	Description
Series:	-
Package:	Bulk
Part Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	-
Current - Collector Pulsed (Icm):	200 A
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 40A
Power - Max:	-
Switching Energy:	-
Input Type:	Standard
Gate Charge:	-
Td (on/off) @ 25°C:	-
Test Condition:	-
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Die

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In Stock: 41308

Shipped from

HK warehouse

Expected Shipping Date

Nov 17 - Nov 21 2025

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