
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Not For New Designs |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPSDR |
| Memory Size: | 128Mb (4M x 32) |
| Memory Interface: | Parallel |
| Clock Frequency: | 166 MHz |
| Write Cycle Time - Word, Page: | 15ns |
| Access Time: | 5.4 ns |
| Voltage - Supply: | 1.7V ~ 1.95V |
| Operating Temperature: | -25°C ~ 85°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 90-TFBGA |
| Supplier Device Package: | 90-VFBGA (8x13) |
| Part Number | Manufacturer & Description | Compare |
|---|---|---|
| W988D2FBJX6E TR Match 50% |
Winbond Electronics Corporation
IC DRAM 256MBIT PARALLEL 90VFBGA
|
W987D2HBJX6E vs W988D2FBJX6E TR |
| W988D2FBJX6E Match 50% |
Winbond Electronics Corporation
IC DRAM 256MBIT PARALLEL 90VFBGA
|
W987D2HBJX6E vs W988D2FBJX6E |
| W987D2HBJX6I Match 100% |
Winbond Electronics Corporation
IC DRAM 128MBIT PARALLEL 90VFBGA
|
W987D2HBJX6E vs W987D2HBJX6I |
| W988D2FBJX6I TR Match 50% |
Winbond Electronics Corporation
IC DRAM 256MBIT PARALLEL 90VFBGA
|
W987D2HBJX6E vs W988D2FBJX6I TR |
| W988D2FBJX6I Match 50% |
Winbond Electronics Corporation
IC DRAM 256MBIT PARALLEL 90VFBGA
|
W987D2HBJX6E vs W988D2FBJX6I |
| W987D2HBJX6E TR Match 100% |
Winbond Electronics Corporation
IC DRAM 128MBIT PARALLEL 90VFBGA
|
W987D2HBJX6E vs W987D2HBJX6E TR |
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ||
| 240 |
Current price of W987D2HBJX6E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com
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