W987D2HBJX6E vs W987D2HBJX7E

This detailed comparison of W987D2HBJX6E and W987D2HBJX7E in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

W987D2HBJX6E

Winbond Electronics Corporation

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W987D2HBJX7E

Winbond Electronics Corporation

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Specifications Hide identical items

Manufacturer	Winbond Electronics Corporation	Winbond Electronics Corporation
Package / Case	90-TFBGA	90-TFBGA
Description	IC DRAM 128MBIT PARALLEL 90VFBGA	IC DRAM 128MBIT PARALLEL 90VFBGA
In Stock	1 968	1 347
Mounting Type	Surface Mount	Surface Mount
Part Status	Not For New Designs	Not For New Designs
Series	-	-
Package	Tray	Tray
Memory Type	Volatile	Volatile
Memory Format	DRAM	DRAM
Technology	SDRAM - Mobile LPSDR	SDRAM - Mobile LPSDR
Memory Size	128Mb (4M x 32)	128Mb (4M x 32)
Memory Interface	Parallel	Parallel
Clock Frequency	166 MHz	133 MHz
Write Cycle Time - Word, Page	15ns	15ns
Access Time	5.4 ns	5.4 ns
Voltage - Supply	1.7V ~ 1.95V	1.7V ~ 1.95V
Operating Temperature	-25°C ~ 85°C (TC)	-25°C ~ 85°C (TC)
Supplier Device Package	90-VFBGA (8x13)	90-VFBGA (8x13)