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MJE800G

MJE800G

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Part No :

MJE800G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 60V 4A TO225AA
Catalog
Transistors - Bipolar (BJT) - Single
Shipped from
HK warehouse
Expected Shipping Date
Oct 07 - Oct 11 2025
DataSheet
MJE800G PDF
Availability
0 pieces
Unit Price
$0.65000

Current price of MJE800G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

MJE800G Specifications
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-225AA
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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