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SIR140DP-T1-RE3

SIR140DP-T1-RE3

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Part No :

SIR140DP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 25V 71.9A/100A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Sep 30 - Oct 04 2025
DataSheet
SIR140DP-T1-RE3 PDF
Availability
5806 pieces
Unit Price
$2.28000

Current price of SIR140DP-T1-RE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIR140DP-T1-RE3 Specifications
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:71.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.67mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:8150 pF @ 10 V
FET Feature:-
Power Dissipation (Max):6.25W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
  • Please confirm the specifications of the products when ordering.
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  • Please confirm with the logistics company in advance if you are in a remote area. (It may cost extra fees (35-50 USD) for delivery at those areas.)
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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