Part No :

BSZ100N03MSGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 10A/40A 8TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
BSZ100N03MSGATMA1 PDF
Availability
3590 pieces
Unit Price
$0.74000

Current price of BSZ100N03MSGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $0.74000 $0.74
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