Part No :

IPS65R1K4C6AKMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 3.2A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IPS65R1K4C6AKMA1 PDF
Availability
1576 pieces
Unit Price
$0.98000

Current price of IPS65R1K4C6AKMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:CoolMOS™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 100 V
FET Feature:-
Power Dissipation (Max):28W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $0.98000 $0.98
10 $0.86536 $8.6536
100 $0.68369 $68.369
500 $0.53022 $265.11
1000 $0.41859 $418.59
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