Part No :

SIR836DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 40V 21A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SIR836DP-T1-GE3 PDF
Availability
7155 pieces
Unit Price
$0.87000

Current price of SIR836DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 20 V
FET Feature:-
Power Dissipation (Max):3.9W (Ta), 15.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $0.87000 $0.87
3000 $0.37310 $1119.3
6000 $0.34889 $2093.34
15000 $0.33678 $5051.7
30000 $0.33018 $9905.4
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