Current price of 3LN01C-TB-H is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 150mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Rds On (Max) @ Id, Vgs: | 3.7Ohm @ 80mA, 4V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 1.58 nC @ 10 V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 7 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 250mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-CP |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
DUAL USB SOCKET, 5V 2.1A SNAP-IN
PANEL MOUNT RED CONTINUOUS OUTPU
MOSFET N-CH 30V 150MA 3CP
IC EEPROM 16KBIT I2C 1MHZ 8SOIC