Part No :

IPP65R190E6XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 20.2A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IPP65R190E6XKSA1 PDF
Availability
116 pieces
Unit Price
$3.34000

Current price of IPP65R190E6XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:CoolMOS™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1620 pF @ 100 V
FET Feature:-
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $3.34000 $3.34
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