Part No :

TK12E80W,S1X

Manufacturer
Toshiba Electronic Devices and Storage Corporation
VIGOR # :

2907322

Description
MOSFET N-CH 800V 11.5A TO220
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
TK12E80W,S1X PDF
Country of origin
-
Date code
-
ads
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 300 V
FET Feature:-
Power Dissipation (Max):165W (Tc)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Jan 19 - Jan 23 2026
Pricing(USD)
Quantity Unit Price Ext. Price
1 $3.44 $3.44
50 $2.77 $138.38
100 $2.52 $252.16
500 $2.04 $1 020.95
1000 $1.72 $1 722.09

Current price of TK12E80W,S1X is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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