SISHA04DN-T1-GE3

Part No :: SISHA04DN-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2909845

Description: MOSFET N-CH 30V 30.9A/40A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SISHA04DN-T1-GE3 PDF

Country of origin: -

Date code: -

SISHA04DN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen IV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	30.9A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2.15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	77 nC @ 10 V
Vgs (Max):	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:	3595 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	3.7W (Ta), 52W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8SH
Package / Case:	PowerPAK® 1212-8SH

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In Stock: 6022

Shipped from

HK warehouse

Expected Shipping Date

Apr 02 - Apr 06 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$1.0000~~	~~$1.00~~

Current price of SISHA04DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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