SIR510DP-T1-RE3

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Part No :: SIR510DP-T1-RE3

Manufacturer: Vishay / Siliconix

Description: N-CHANNEL 100 V (D-S) MOSFET POW

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Oct 02 - Oct 06 2025

DataSheet: SIR510DP-T1-RE3 PDF

Availability: 0 pieces

Unit Price: ~~$2.35000~~

Current price of SIR510DP-T1-RE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIR510DP-T1-RE3 Specifications

Type	Description
Series:	TrenchFET® Gen V
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	31A (Ta), 126A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	7.5V, 10V
Rds On (Max) @ Id, Vgs:	3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	81 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4980 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	6.25W (Ta), 104W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SO-8
Package / Case:	PowerPAK® SO-8

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