SUD09P10-195-GE3

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Part No :: SUD09P10-195-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET P-CH 100V 8.8A TO252

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Oct 02 - Oct 06 2025

DataSheet: SUD09P10-195-GE3 PDF

Availability: 46509 pieces

Unit Price: ~~$0.91000~~

Current price of SUD09P10-195-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SUD09P10-195-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	195mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	34.8 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1055 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 32.1W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252, (D-Pak)
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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