IPD65R950CFDBTMA1

Part No :: IPD65R950CFDBTMA1

Manufacturer: IR (Infineon Technologies)

VIGOR # :: 4586564

Description: MOSFET N-CH 650V 3.9A TO252-3

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: IPD65R950CFDBTMA1 PDF

Country of origin: -

Date code: -

IPD65R950CFDBTMA1 Specifications

Type	Description
Series:	CoolMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:	14.1 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	380 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	36.7W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 22 - Jan 26 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of IPD65R950CFDBTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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