BSM25GD120DN2BOSA1

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Part No :

BSM25GD120DN2BOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 35A 200W
Catalog
Transistors - IGBTs - Modules
Shipped from
HK warehouse
Expected Shipping Date
Oct 27 - Oct 31 2025
DataSheet
BSM25GD120DN2BOSA1 PDF
Availability
0 pieces
Unit Price
$103.82400

Current price of BSM25GD120DN2BOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Tray
Part Status:Not For New Designs
IGBT Type:-
Configuration:Full Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):35 A
Power - Max:200 W
Vce(on) (Max) @ Vge, Ic:3V @ 15V, 25A
Current - Collector Cutoff (Max):800 µA
Input Capacitance (Cies) @ Vce:1.65 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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