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BSM75GD120DN2BOSA1

BSM75GD120DN2BOSA1

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Part No :

BSM75GD120DN2BOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 103A 520W
Catalog
Transistors - IGBTs - Modules
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2025
DataSheet
BSM75GD120DN2BOSA1 PDF
Availability
0 pieces
Unit Price
$228.29100

Current price of BSM75GD120DN2BOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSM75GD120DN2BOSA1 Specifications
Type Description
Series:-
Package:Tray
Part Status:Not For New Designs
IGBT Type:-
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):103 A
Power - Max:520 W
Vce(on) (Max) @ Vge, Ic:3V @ 15V, 75A
Current - Collector Cutoff (Max):1.5 mA
Input Capacitance (Cies) @ Vce:5.1 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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  • Delivery date: usually 2 to 7 working days.
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